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Rekha Shines at The Red Sea Film Festival With a Rare Public Appearance_我的网站

一 |     8月24日消息，据Wccftech报道，SK海力士近日详细阐述了其HBM技术路线图的加速路径，核心举措包括引入EMIB封装方案，并明确将3D集成作为长期目标。     当前，HBM通过TSV（硅通孔）技术将多层DRAM芯片堆叠于基础裸片之上，最高可支持16层堆叠。    Rekha made a rare public appearance at the 2025 Red Sea International Film Festival in Jeddah, where she attended the 4K screening of her film Umrao Jaan from 1981. This a restored version of the old classic. Dressed in an ivory and gold saree with sindoor, the veteran actor drew significant attention as she arrived for the event. Her presence created a sense of anticipation among attendees who were eager to see the iconic star.          During the on stage segment, Rekha received a glass trophy and was greeted with sustained applause. Known for her calm and reserved nature, she shared a few reflections about her work and the legacy of Umrao Jaan. She spoke about how her expressions often conveyed emotions that went beyond spoken lines and recalled her mother’s guidance on leading by example rather than discussing personal achievements.          A highlight of the evening came when Rekha recited lines from Umrao Jaan as the restored version played in the background. The audience responded warmly, with many fans joining in during the musical moments.           Rekha’s appearance also drew attention for her traditional look, which once again sparked conversations among the fashion circles. Her ivory and gold drape and her overall presence were widely noted by attendees. The event concluded with strong applause, and many viewers remarked that her appearance added a significant emotional and cultural moment to the festival.Also Read: PHOTOS: Rekha’s All-black Avatar Steals The Show at The Airport。HBM与计算模块（XPU，涵盖GPU、TPU等）相互独立，通过2.5D封装共同安装于同一中介层。    

    每个HBM模块配备1024位I/O接口（共16通道），通过物理接口层（PHY）与XPU相连。而下一代HBM4将首次将I/O接口扩展至2048位，这将是自2015年HBM问世以来的最大规格变革。

二 |     在封装工艺上，目前主要存在两大技术路径：热压键合配合非导电膜（TC+NCF）和整体回流焊配合模塑底部填充（MR+MUF）。前者在应对芯片翘曲方面更具优势，但热阻较高且生产效率偏低；后者生产效率更高、热阻更低，却更易出现翘曲及间隙填充缺陷。    

    面向未来，SK海力士计划引入混合键合技术，以消除芯片堆叠中的凸块并缩小间距。同时，公司正在开发名为“I-HBM”的局部散热技术（类似三星的HPB方案），旨在优化传热路径，更高效地分散热量，为更高层数的堆叠铺路。    在2.5D封装解决方案方面，SK海力士目前已在传统CoWoS-L、CoWoS-R和CoWoS-S之外，新增了英特尔的EMIB技术，形成更丰富的异构集成选项。     此外，市场传言SK海力士与英特尔有望在存储领域组建合资公司，进一步深化合作。同时，与三星类似，SK海力士也在积极推进3D垂直堆叠方案，将HBM直接置于计算模块之上，以突破现有封装架构的带宽和能效瓶颈。    

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Published on:02:48:19